optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 07/06 page 1 of 4 plastic infrared emitting diode op265, op266 series (a, b, c, d, w) features: ? t-1 (3 mm) package style ? choice of narrow or wide irradiance pattern ? choice of dome or flat lens ? mechanically and spectrally matched to other optek devices ? higher power output than gaas at equivalent drive currents ? 890 nm diodes description: each device in the op265 and op266 series is a high intensity gallium ars enide infrared emitting diode (gaaias) that is molded in an ir transmissive clear or amber-tinted epoxy package with either a dome or flat lens. devices feature narrow and wide irradiance patterns and a variety of electrical characteristics. the small t-1 package style makes these devices ideal for space-limited applications. op265 devices conform to the op505 and op535 series devices. op266 devices conform to op506 series devices. please refer to application bulletins 208 and 210 for additional design information and reliability (degradation) data. applications: ? space-limited applications ? applications requiring coupling efficiency ? battery-operated or voltage-limited applications rohs ordering information part number led peak wavelength output power (mw/ cm 2 ) min / max i f (ma) typ / max total beam angle lead length op265a 890 nm 2.70 / na 20 / 50 18 op265b 1.65 / 4.70 op265c 0.54 / 3.30 OP265D 0.54 / na op265w 1.00 / na 90 op266a 2.70 / na 18 op266b 1.65 / 4.70 op266c 0.54 / 3.30 op266d 0.54 / na op266w 1.00 / na 90 0.50"
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 07/06 page 2 of 4 plastic infrared emitting diode op265, op266 series (a, b, c, d, w) op265w op265 (a, b, c, d) op266w op266 (a, b, c, d) contains polysulfone to avoid stress cracking, we suggest using nd industries? vibra-tite for thread-locking. vibra-tite evaporates fast without causing structural failure in optek's molded plastics. pin # led 1 cathode 2 anode 1 2 inches [millimeters] dimensions are in:
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 07/06 page 3 of 4 plastic infrared emitting diode op265, op266 series (a, b, c, d, w) notes: 1. rma flux is recommended. duration can be extended to 10 second maximum when flow soldering. a maximum of 20 grams force may be applied to the leads when soldering. 2. derate linearly at 1.33 mw/ c above 25 c. 3. e e(apt) is a measurement of the average apertured radiant incidence upon a sensing area 0.081? (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens and 0.590? (14.99 mm) from the measurement surface. e e(apt) is not necessarily uniform within the measured area. absolute maximum ratings (t a = 25 c unless otherwise noted) storage and operating te mperature range -40 o c to +100 o c reverse voltage 2.0 v continuous forward current 50 ma peak forward current (1 s pulse width, 300 pps) 3.0 a lead soldering temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260 c (1) power dissipation 100 mw (2) electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter min typ max units test conditions input diode e e (apt) apertured radiant incidence op265a, op266a op265b, op266b op265c, op266c OP265D, op266d 2.70 1.65 0.54 0.54 - - - - - 4.70 3.30 - mw/cm 2 i f = 20 ma (3) p o radiant power output op265, op266 (a, b, c, d) op265w, op266w - 1.00 - - - - mw i f = 20 ma v f forward voltage - - 1.80 v i f = 20 ma i r reverse current - - 100 a v r = 2 v p wavelength at peak emission - 890 - nm i f = 10 ma b spectral bandwidth between half power points - 80 - nm i f = 10 ma ? p / ? t spectral shift with temperature op265, op266 (a, b, c, d) op265w, op266w - - 0.30 0.18 - - nm/c i f = constant hp emission angle at half power points op265, op266 (a, b, c, d) op265w, op266w - - 18 90 - - degree i f = 20 ma t r output rise time - 500 - ns t f output fall time - 250 - ns i f(pk) =100 ma, pw=10 s, d.c.=10.0%
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 07/06 page 4 of 4 plastic infrared emitting diode op265, op266 series (a, b, c, d, w) op265, op266 (a, b, c, d, w) forward voltage vs forward current vs temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 102030405060708090100 forward current (ma) typical forward voltage (v) -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120c optical power vs i f vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 102030405060708090100 forward current i f (ma) normalized optical power -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c normalized at 50 ma and 20 c relative radiant intensity vs. angular displacement 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -20 -15 -10 -5 0 5 10 15 20 angular displacement (degrees) relative radiant intensity distance vs output power vs forward current 0 1 2 3 4 5 6 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma 90 ma 100 ma normalized at 1" and 50 m a forward current
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